From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO$_x$ Memristive Devices
Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains elusive. Here, we establish a multiscale framework connecting plasma-defined deposition conditions to macroscopic device functionality in sputtered SiO$_x$/Cu/SiO$_x$-based systems. By combining large-scale statistical analysis of more than 50,000 experimentally characterized devices with physics-based plasma and atomistic simulations, we show that device behavior does not emerge from deterministic process-to-performance mappings, but from a probabilistic cascade spanning defect formation, defect-state evolution,...
| Authors | Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla et al. |
|---|---|
| Primary category | cond-mat.mtrl-sci |
| Published | 24 September 2026 |
| Last updated at source | 24 September 2026 |
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