A Two-Mirror Faceted Projection System for EUV Lithography
We propose an all-reflective two-mirror projection system for extreme ultraviolet (EUV) lithography operating at exposure wavelengths of $13.5$~nm (Mo/Si) and $11.2$~nm (Ru/Be), delivering a fourfold ($4\times$) demagnification of the periodic mask pattern at a numerical aperture approaching unity ($\mathrm{NA}_{\max} \approx 0.993$). In contrast to conventional EUV projection objectives that incorporate 6--10 aspheric mirrors with an overall optical throughput of less than $15\%$, the proposed design redirects each accepted discrete spatial diffraction order scattered by the mask onto the wafer via a dedicated pair of planar mirror facets. The number of reflections is strictly fixed at t...
| Authors | Vasiliy A. Es'kin, Egor V. Ivanov, Olga V. Martynova |
|---|---|
| Primary category | physics.optics |
| Published | 10 September 2026 |
| Last updated at source | 10 September 2026 |
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