Accelerated Dopant Screening in Oxide Semiconductors via Multi-Fidelity Contextual Bandits and a Three-Tier DFT Validation Funnel
Band gap engineering of oxide semiconductors through doping is critical for photocatalysis and optoelectronics, yet the combinatorial space of dopant elements, substitution sites, and co-doping combinations far exceeds typical density functional theory (DFT) budgets. We screen doped candidates across five oxide hosts (ZnO, TiO2, SrTiO3, SnO2, MgO), culminating in a 529-candidate ZnO co-doping campaign, and identify Cu-containing co-doped ZnO systems as consistently achieving visible-light-range band gaps (1.0-1.8 eV), with Y2Cu2 co-doped ZnO as the optimal candidate (1.84 eV). A three-tier validation funnel (PBE, PBE+U, ionic relaxation) reveals that no single level of theory suffices: V-...
| Authors | Abhinaba Basu |
|---|---|
| Primary category | cond-mat.mtrl-sci |
| Published | 11 April 2026 |
| Last updated at source | 11 April 2026 |
Silytics shows public metadata from arXiv and links to the original. Information may be incomplete or out of date. Last refreshed 17 October 2026. Licenses and terms of the original apply to the work itself. Not financial, legal or professional advice.